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CM100DU-12F Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM100DU-12F Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 4 page Sep.2000 VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V Tj = 25 °C Tj = 125 °C VCC = 300V, IC = 100A, VGE = 15V VCC = 300V, IC = 100A VGE1 = VGE2 = 15V RG = 6.3 Ω, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips IC = 10mA, VCE = 10V IC = 100A, VGE = 15V VCE = 10V VGE = 0V 600 ±20 100 200 100 200 350 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE V V A A A A W °C °C V N • m N • m g 1 20 2.2 — 27 1.8 1 — 100 80 300 250 150 — 2.6 0.35 0.70 — 0.28*3 63 mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω — — 1.6 1.6 — — — 620 — — — — — 1.9 — — — 0.07 — — — — — — — — — — — — — — — — — — — — — 6.3 6V V 57 ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter Test conditions VGE(th) VCE(sat) Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short TC = 25 °C Pulse (Note 2) TC = 25 °C Pulse (Note 2) TC = 25 °C Charged part to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Unit Typ. Limits Min. Max. Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150 °C. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. MAXIMUM RATINGS (Tj = 25 °C) ELECTRICAL CHARACTERISTICS (Tj = 25 °C) |
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