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2007. 4. 25 1/4 SEMICONDUCTOR TECHNICAL DATA KRX102F Revision No : 2 SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES Including two devices in TFSV. (Thin Fine Pitch Super mini 5pin Package.) With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process. EQUIVALENT CIRCUIT Q1 MAXIMUM RATING (Ta=25 ) R1 R2 COMMON OUT Q 1 1 IN R1 R2 COMMON OUT Q 2 IN Q R1=47K Ω R2=47K Ω 2 Q R1=10K Ω R2=47K Ω 1 Q1 23 54 Q2 EQUIVALENT CIRCUIT (TOP VIEW) * Total Raing. CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 10 V Collector Current IC 50 CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Collector Current IC -50 CHARACTERISTIC SYMBOL RATING UNIT Power Dissipation PD * 100 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 BM Type Name 12 3 4 5 Q2 MAXIMUM RATING (Ta=25 ) Q1, Q2 MAXIMUM RATING (Ta=25 ) Marking EPITAXIAL PLANAR NPN/PNP TRANSISTOR 1. Q COMMON (EMITTER) 2. Q IN (BASE) 3. Q COMMON (EMITTER) 4. Q OUT (COLLECTOR) 5. Q OUT (COLLECTOR) 1 1 Q IN (BASE) 2 1 2 2 DIM MILLIMETERS A B B1 A1 B1 C TFSV 1.0 0.05 0.7 0.05 1.0 0.05 0.8 0.05 0.35 0.15 0.05 0.38+0.02/-0.04 B D H T 0.1 0.05 + _ + _ + _ + _ + _ + _ 1 2 3 4 5 |
