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2SK2624ALS Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SK2624ALS Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 5 page 2SK2624ALS No. A0362-1/5 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENA0362A Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 22107 TI IM TC-00000529 / 72006QB MS IM TC-00000028 SANYO Semiconductors DATA SHEET 2SK2624ALS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 3.5 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 12 A Allowable Power Dissipation PD 2.0 W Tc=25°C25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 49 mJ Avalanche Current *2 IAV 3A *1 VDD=50V, L=10mH, IAV=3A *2 L≤10mH, single pulse Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 600 V Zero-Gate Voltage Drain Current IDSS VDS=600V, VGS=0V 1.0 mA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V Marking : K2624 Continued on next page. |
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