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CPH6530 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part No. CPH6530
Description  PNP / NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose
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Maker  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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CPH6530
No.8709-1/5
Applications
Muting circuit, relay drivers, lamp drivers, motor drivers.
Features
Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting.
Ultrasmall package permitting applied sets to be small and slim.
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--15)60
V
Collector-to-Emitter Voltage
VCEO
(--12)50
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--1)0.5
A
Collector Current (Pulse)
ICP
(--2)1
A
Collector Dissipation
PC
Mounted on a ceramic board (600mm2!0.8m) 1unit
0.6
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--12)40V, IE=0A
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)100
nA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)10mA
300
(700)800
Gain-Bandwidth Product
fT
VCE=(--2)10V, IC=(--)50mA
(450)500
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(6)2.8
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--400)100mA, IB=(--20)10mA
(--120)50 (--240)100
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--400)100mA, IB=(--20)10mA
(--)0.9
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10µA, IE=0A
(--15)60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--12)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10µA, IC=0A
(--)5
V
Marking : EQ
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8709
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2805EA MS IM TB-00001960
CPH6530
PNP / NPN Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose
Applications




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