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5SNA1200E2501 Datasheet(PDF) 6 Page - ABB |
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5SNA1200E2501 Datasheet(HTML) 6 Page - ABB |
6 / 9 page 5SNA 1200E250100 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 6 of 9 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 500 1000 1500 2000 2500 IC [A] Eon Eoff VCC = 1250 V RG = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 100 nH E sw[mJ] = 325 x 10 -6 x I C 2 + 1.31 x I C +347 0 1 2 3 4 5 6 0 5 10 15 RG [ohm] Eon Eoff VCC = 1250 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 0.01 0.1 1 10 0 500 1000 1500 2000 2500 IC [A] VCC = 1250 V RG = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 100 nH td(on) td(off) tf tr 0.1 1 10 0 5 10 15 20 RG [ohm] td(on) td(off) tr tf VCC = 1250 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH Fig. 7 Typical switching times vs collector current Fig. 8 Typical switching times vs gate resistor |
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