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5SNA0400J6501 Datasheet(PDF) 8 Page - ABB |
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5SNA0400J6501 Datasheet(HTML) 8 Page - ABB |
8 / 9 page 5SNA 0400J650100 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1592-01 Jun 07 page 8 of 9 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 100 200 300 400 500 600 700 800 900 IF [A] VCC = 3600 V RG = 5.6 ohm VGE = ±15 V Tvj = 125 °C Lσ = 280 nH Erec Qrr Irr Erec [mJ] = -2.1 x 10 -3 x I C 2 + 3.58 x I C + 286 0 200 400 600 800 1000 1200 1400 1600 0 0.5 1 1.5 2 2.5 di/dt [kA/µs] VCC = 3600 V IF = 400 A VGE = ±15 V Tvj = 125 °C Lσ = 280 nH Qrr Irr Erec Fig. 12 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 VF [V] 25 °C 125 °C 0 200 400 600 800 1000 0 1000 2000 3000 4000 5000 6000 7000 VR [V] VCC ≤ 4400 V di/dt ≤ 2500 A/µs Tvj = 125 °C Lσ ≤ 280 nH Fig. 14 Typical diode forward characteristics, chip level Fig. 15 Safe operating area diode (SOA) |
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