tm

April 2007

©2007 Fairchild Semiconductor Corporation

FDA2712 Rev. A

www.fairchildsemi.com

1

UltraFET

FDA2712

N-Channel UltraFET Trench MOSFET

250V, 64A, 34m

Ω

Features

• Fast switching speed

• Low gate charge

• High power and current handling capability

• RoHS compliant

Applications

• PDP application

Description

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s advanced PowerTrench process that has been especial-

ly tailored to minimize the on-state resistance and yet maintain

superior switching performance.

D

G

S

GS

D

TO-3PN

MOSFET Maximum Ratings

Thermal Characteristics

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

250

V

Gate to Source Voltage

±30

V

DrainCurrent

64

A

44

Drain Current

- Pulsed

(Note 1)

240

A

Single Pulsed Avalanche Energy

(Note 2)

245

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

357

W

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol

Parameter

Ratings

Units

Thermal Resistance, Junction to Case

0.35

Thermal Resistance, Junction to Ambient

40