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DN2625K4-G Datasheet(PDF) 1 Page - Supertex, Inc |
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DN2625K4-G Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 7 page DN2625 Features Very low gate threshold voltage Design to be source-driven Low switching losses Low effective output capacitance Design for inductive load Well matched for low second harmonic Applications Medical ultrasound beamforming Ultrasonic array focusing transmitter Piezoelectric transducer waveform drivers High speed arbitrary waveform generator Normally-on switches Solid state relays Constant current sources Power supply circuits ► ► ► ► ► ► ► ► ► ► ► ► ► ► General Description The Supertex DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. N-Channel Depletion-Mode Vertical DMOS FETs 90% 10% 90% 90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 0V V DD RGEN 0V -10V Switching Waveforms and Test Circuit Thermal Characteristics Package I D (continuous)1 (A) I D (pulsed) (A) R ΘjA 2 (OC/W) R ΘjC (OC/W) I DR 1 (A) I DRM (A) D-PAK 1.1 3.3 50 5.5 1.1 3.3 14-Lead QFN 45 4.0 Notes: 1. I D (Continuous) is limited by Max. TJ 2. 4-layer, 1oz, 3x4inch PCB, with 20-via for drain pad. |
Similar Part No. - DN2625K4-G |
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Similar Description - DN2625K4-G |
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