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NTE631 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE631 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE631 Silicon Rectifier Diode High−Speed Switch (Surface Mount) Description: The NTE631 is a high−speed switching diode fabricated in planar technology and encapsulated in a very small rectangular ceramic SMD package. Features: D Small Ceramic SMD Package D High Switching Speed Applications: D High−Speed Switching in Surface Mounted Circuits Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, VRRM 85V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Reverse Voltage, VR 75V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Forward Current (Note 1), IF 250mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Repetiive Peak Forward Current, IFRM 5020mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Non−Repetitive Peak Forward Current (Square Wave, TJ = +25°C Prior to Surge), IFSM t = 1µs 4A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t = 1ms 1A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t = 1sec 0.5A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation (TA = +25°C, Note 1), Ptot 400mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature, TJ +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg −65° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction−to−Ambient (Note 1), RthJA 315K/W . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction−to−Case, RthJC 200K/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Note 1. Device mounted on an FR4 printed−circuit board. Electrical Characteristics: (TJ = +25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Forward Voltage VF IF = 1mA − − 715 mV IF = 10mA − − 855 mV IF = 50mA − − 1.0 V IF = 150mA − − 1.25 V |
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