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UAA2073M Datasheet(PDF) 9 Page - NXP Semiconductors |
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UAA2073M Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 16 page  1995 Dec 07 9 Philips Semiconductors Product specification Image rejecting front-end for GSM applications UAA2073M AC CHARACTERISTICS VCC = 3.75 V; Tamb = −30 to +85 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Receive section (receive section on) ZRF RF input impedance (real part) balanced parallel − 150 −Ω fRF RF input frequency 925 − 960 MHz RLRF return loss on matched RF input note 1 15 20 − dB GCP conversion power gain differential RF input to differential IF output matched to 1k Ω differential 20 23 26 dB Grip gain ripple as a function of RF frequency note 2 − 0.2 0.5 dB ∆G/T gain variation with temperature note 2 −20 −15 −10 mdB/K DES1 1 dB desensitization input power interferer frequency offset 3 MHz −−30 − dBm CP1RX 1 dB input compression point note 1 −24.5 −23.0 − dBm IP2DRX 2nd order intercept point referenced to the RF differential input differential output; note 2 +30 +40 − dBm IP3RX 3rd order intercept point referenced to the RF input note 2 −18 −15 − dBm NFRX overall noise figure RF input to differential IF output; notes 2 and 3 − 3.25 4.30 dB RL(IF) typical application IF output load resistor between pin and VCC − 500 −Ω CL(IF) IF output load capacitance unbalanced −− 2pF fIF IF frequency range fLO >fRF 50 71 100 MHz fLO <fRF 50 71 100 MHz IR image frequency rejection 30 37 − dB Local oscillator section (RXON or TXON or SYNTHON = 1) fLO LO input frequency 850 − 1100 MHz ZLO LO input impedance balanced − 50 −Ω ∆Z LO impedance change when switching from synthon mode to SRX or STX mode mUnits measured on Smith chart; note 1 − 20 −Ω RLLO return loss on matched input (including power-down mode) note 2 10 15 − dB Pi(LO) LO input power level −7 −4 0 dBm RILO reverse isolation LOIN to RFIN at LO frequency; note 2 40 −− dB |
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Similar Description - UAA2073M |
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