ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

=

4500 V

=

1400 A

=

25×10

=

1.2 V

=

0.32 m

Ω

2200 V

Fast Recovery Diode

5SDF 14H4505

Doc. No. 5SYA1110-02 Oct. 06

• Patented free-floating silicon technology

• Low on-state and switching losses

• Optimized for use as freewheeling diode in GTO

converters with low DC-link voltages

• Industry standard housing

• Cosmic radiation withstand rating

Blocking

Maximum rated values

1)

Parameter

Symbol Conditions

Value

Unit

Repetitive peak reverse voltage

4500

V

Permanent DC voltage for 100 FIT

failure rate

Ambient cosmic radiation at sea level in open

air. (100% Duty)

2200

V

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Repetitive peak reverse current

50

mA

Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below 0 °C

Mechanical data

Maximum rated values

1)

Parameter

Symbol Conditions

min

typ

max

Unit

Mounting force

36

40

44

kN

Acceleration

a

Device unclamped

50

m/s

2

Acceleration

a

Device clamped

200

m/s

2

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Weight

m

0.83

kg

Housing thickness

H

25.9

26.4

mm

Surface creepage distance

30

mm

Air strike distance

20

mm

Note 1 Maximum rated values indicate limits beyond which damage to the device may occur