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GT80J101B Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # GT80J101B
Description  TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

GT80J101B Datasheet(HTML) 3 Page - Toshiba Semiconductor

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GT80J101B
2006-06-05
3
Collector-emitter voltage VCE (V)
IC − VCE
Gate-emitter voltage VGE (V)
VCE − VGE
Gate-emitter voltage VGE (V)
VCE − VGE
Gate-emitter voltage VGE (V)
VCE − VGE
Gate-emitter voltage VGE (V)
IC − VGE
Case temperature Tc (°C)
VCE (sat) − Tc
0
0
2
4
6
8
10
20
40
60
80
100
15
20
10
8
6
5
Common emitter
Tc
= 25 °C
VGE = 4 V
0
0
2
4
6
8
10
4
8
12
16
20
24
10
20
40
60
IC = 80 A
Common emitter
Tc
= −40°C
0
0
20
40
60
80
100
2
4
6
8
10
12
Common emitter
VCE = 5 V
−40
25
Tc
= 125°C
Common emitter
VGE = 15 V
0
−40
1
2
3
4
0
40
80
120
160
IC = 10 A
30
50
80
0
0
2
4
6
8
10
4
8
12
16
20
24
10
20
40
60
IC = 80 A
Common emitter
Tc
= 25°C
0
0
2
4
6
8
10
4
8
12
16
20
24
10
20
40
60
IC = 80 A
Common emitter
Tc
= 125°C


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