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FSDM0565RE Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FSDM0565RE Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 21 page © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FSDM0465RE, FSDM0565RE, FSDM07652RE Rev. 1.0.1 5 Absolute Maximum Ratings The “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The parametric values defined in the Electrical Characteristics tables are not guaranteed at the absolute maximum ratings. TA = 25°C, unless otherwise specified. Notes: 5. Repetitive rating: Pulse width limited by maximum junction temperature. 6. L=14mH, starting TJ=25°C. Thermal Impedance TA=25°C, unless otherwise specified. Notes: 7. Free-standing, with no heat-sink, under natural convection. 8. Infinite cooling condition - refer to the SEMI G30-88. Symbol Parameter Value Unit BVDSS Drain Source Breakdown Voltage 650 V Vstr Max. Voltage at Vstart pin 650 V IDM Drain Current Pulsed(5) FSDM0465RE TC=25°C 9.6 ADC FSDM0565RE TC=25°C 11 FSDM07652RE TC=25°C 15 ID Continuous Drain Current FSDM0465RE TC=25°C 2.2 A TC=100°C 1.4 FSDM0565RE TC=25°C 2.8 TC=100°C 1.7 FSDM07652RE TC=25°C 3.8 TC=100°C 2.4 EAS Single Pulsed Avalanche Energy(6) FSDM0465RE mJ FSDM0565RE 190 FSDM07652RE 370 VCC Supply Voltage 20 V VFB Input Voltage Range -0.3 to VCC V PD(Watt H/S) Total Power Dissipation (TC=25°C) TO-220-6L 45 W I2-PAK-6L 75 TJ Operating Junction Temperature Internally limited °C TA Operating Ambient Temperature -25 to +85 °C TSTG Storage Temperature -55 to +150 °C ESD Capability, HBM Model (All pins except Vstr and FB) 2.0 (GND-Vstr/VFB=1.5kV) kV ESD Capability, Machine Model (All pins except Vstr and FB) 300 (GND-Vstr/VFB=225V) V Symbol Parameter Package Value Unit θ JA (7) Junction-to-Ambient Thermal Resistance TO-220F-6L 49.90 °C/W I2-PAK-6L 30 θ JC (8) Junction-to-Case Thermal Resistance TO-220F-6L 2.78 °C/W I2-PAK-6L 1.67 |
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