NLAS7222C datasheet(3/9 Pages) ONSEMI

Part #	NLAS7222C

Description	High-Speed USB 2.0 (480 Mbps) DPDT Switches

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Manufacturer	ONSEMI [ON Semiconductor]

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NLAS7222B, NLAS7222C

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ESD PROTECTION

Symbol

Parameter

Value

Unit

ESD

Human Body Model - All Pins

2.0

kV

ESD

Human Body Model - I/O to GND

8.0

kV

DC ELECTRICAL CHARACTERISTICS

CONTROL INPUT (Typical: T = 25

°C, VCC = 3.3 V)

Symbol

Pins

Parameter

Test Conditions

VCC (V)

-

40

°C to +85°C

Unit

Min

Typ

Max

VIH

OE

Control Input HIGH

Voltage (See Figure 3)

2.7

3.3

4.2

1.3

1.4

1.6

-

V

VIL

OE

Control Input LOW

Voltage (See Figure 3)

2.7

3.3

4.2

-

0.4

0.5

V

IIN

OE

Control Input Leakage

Current

0

≤ VIS ≤ VCC

1.65 - 4.5

-

±1.0

mA

SUPPLY AND LEAKAGE CURRENT (Typical: T = 25

°C, VCC = 3.3 V)

Symbol

Pins

Parameter

Test Conditions

VCC (V)

-

40

°C to +85°C

Unit

Min

Typ

Max

ICC

VCC

Quiescent Supply

Current

VIS = VCC or GND; IOUT =

0 A

1.65 - 4.5

-

1.0

mA

ICCT

VCC

Increase in ICC

per

Control Voltage

VIN = 2.6 V

3.6

-

10

mA

IOZ

HSD1+, HSD1-

HSD2+, HSD2-

OFF State

Leakage Current

0

≤ VIS ≤ VCC

1.65 - 4.5

-

±1.0

mA

IOFF

D+, D-

Power OFF

Leakage Current

0

≤ VIS ≤ 4.5 V

0

-

±1.0

mA

HIGH SPEED ON RESISTANCE (Typical: T = 25

°C, VCC = 3.3 V)

Symbol

Pins

Parameter

Test Conditions

VCC (V)

-

40

°C to +85°C

Unit

Min

Typ

Max

RON

On-Resistance

VIS = 0 V to 0.4 V, ION =

8 mA

2.7

3.3

4.2

-

9.0

8.0

7.0

12

10

8.0

W

RFLAT

On-Resistance

Flatness

VIS = 0 V to 1.0 V, ION =

8 mA

2.7

3.3

4.2

-

1.6

1.5

1.4

-

W

DRON

On-Resistance

Matching

VIS = 0 V to 0.4 V, ION =

8 mA

2.7

3.3

4.2

-

1.05

0.85

0.65

-

W

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