2007. 6. 28

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SEMICONDUCTOR

TECHNICAL DATA

KMB3D0P30SA

P-Ch Trench MOSFET

Revision No : 1

General Description

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for portable equipment and SMPS.

FEATURES

Drain-Source ON Resistance

Super Hige Dense Cell Design

MAXIMUM RATING (Ta=25

)

DIM

MILLIMETERS

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

PIN CONNECTION (TOP VIEW)

2

3

1

GS

D

1

2

3

CHARACTERISTIC

SYMBOL

N-Ch

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

20

V

Drain Current

-3

A

-2.5

Pulsed

-12

Drain-Source-Diode Forward Current

-1.25

A

Drain Power Dissipation

1.25

W

0.8

Maximum Junction Temperature

150

Storage Temperature Range

-55

150

Thermal Resistance, Junction to Ambient

100

/W

Note : *Sorface Mounted on FR4 Board