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6MBP75TEA120 Datasheet(PDF) 7 Page - Fuji Electric |
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6MBP75TEA120 Datasheet(HTML) 7 Page - Fuji Electric |
7 / 8 page 6MBP75TEA120 IGBT-IPM 0 5 10 15 20 25 30 35 0 255075 100 125 Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=125°C Eon Eoff Err Collector current : Ic (A) 0 100 200 300 400 500 0 20 40 60 80 100 120 140 160 Power derating for IGBT (max.) (per device) Case Temperature : Tc (°C) 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 Power derating for FWD (max.) (per device) Case Temperature : Tc (°C) 0 10 0 20 0 30 0 40 0 50 0 60 0 70 0 0 20 0 400 60 0 800 1 00 0 1200 140 0 Reve rs ed bias ed s a fe operating area Vc c =1 5V, Tj<= 125 °C (min .) C ollecto r-Emitte r vo ltage : V c e ( V) SCSO A (no n-repe titive pu ls e ) RBSO A (R e pe titive puls e) 0.01 0.1 1 0.001 0.01 0.1 1 Transient therm al resistance (max.) Pulse w idth :Pw (sec ) FW D IG BT 0 5 10 15 20 25 30 35 0 25 50 75 100 125 Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=25 ° C Eon Eoff Err Collector current : Ic (A) |
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