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RQA0009SXTL-E Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # RQA0009SXTL-E
Description  Silicon N-Channel MOS FET
Download  13 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQA0009SXTL-E Datasheet(HTML) 5 Page - Renesas Technology Corp

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RQA0009SXAQS
REJ03G1566-0100 Rev.1.00 Jul 04, 2007
Page 5 of 12
Frequency f (MHz)
450
470
490
510
530
550
Power Gain, Power Added Efficiency
vs. Frequency
Input Return Loss vs. Frequency
470
490
510
530
550
Frequency f (MHz)
450
Idling Current IDQ (A)
0
0.1
0.2
0.3
0.5
0.4
Power Gain, Power Added Efficiency
vs. Idling Current
VDS = 6 V
f = 520 MHz
Pin = 25 dBm
0
5
20
15
10
60
65
80
75
70
Power Gain, Power Added Efficiency,
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
0
10
20
30
50
IDQ = 180 mA
f = 520 MHz
Pin = 25 dBm
70
15
5
60
56
7
8
9
PG
PAE
3
Power Gain, Power Added Efficiency
vs. Input Power
Input Power Pin (dBm)
Output Power, Drain Current
vs. Input Power
Input Power Pin (dBm)
0
40
80
20
60
0
10
20
5
15
PG
PAE
VDS = 6 V
IDQ = 180 mA
Pin = 25 dBm
PG
PAE
VDS = 6 V
IDQ = 180 mA
Pin = 25 dBm
-20
-15
-5
-10
0
4
40
PAE
PG
0
5
10
20
25
0
20
40
60
80
0
5
15
30
10
20
VDS = 6 V
f = 520 MHz
IDQ = 180 mA
15
100
0
10
15
25
40
0
0.6
1.2
1.4
0
5
15
30
10
20
20
0.8
0.2
VDS = 6 V
f = 520 MHz
IDQ = 180 mA
ID
Pout
5
30
35
0.4
1.0
1.6
25
25


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