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REJ03G1530-0100 Rev.1.00 Apr 17, 2007 Page 1 of 3 RJK5014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1530-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 2 3 D S G 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID Note4 19 A Drain peak current ID (pulse) Note1 38 A Body-drain diode reverse drain current IDR 19 A Body-drain diode reverse drain peak current IDR (pulse) Note1 38 A Avalanche current IAP Note3 4 A Avalanche energy EAR Note3 0.88 mJ Channel dissipation Pch Note2 35 W Channel to case thermal impedance θch-c 3.57 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C 4. Limited by maximum safe operation area |
