GTC220E

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ISSUED DATE :2006/09/13

REVISED DATE :

G

E

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GTC220E provides the designer with the best combination of fast switching, ruggedized device design,

ultra low on-resistance and cost-effectiveness.

Features

*Low on-resistance

*Capable of 2.5V gate drive

*Low drive current

*Surface mount package

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

-

1.20

E

6.20

6.60

A1

0.05

0.15

E1

4.30

4.50

b

0.19

0.30

e

0.65 BSC

c

0.09

0.20

L

0.45

0.75

D

2.90

3.10

S

0°

8°

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±12

V

5.0

A

4.0

A

20

A

Total Power Dissipation

1

W

Linear Derating Factor

0.008

W/ :

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

:

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient

Max.

Rthj-a

125

/

: W

20V

30m

5A