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MTD5P06V Datasheet(PDF) 2 Page - ON Semiconductor |
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MTD5P06V Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page MTD5P06V http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 60 − − 61.2 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS − − − − 10 100 µAdc Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 3.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 − 2.8 4.7 4.0 − Vdc mV/ °C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 2.5 Adc) RDS(on) − 0.34 0.45 Ohm Drain−Source On−Voltage (VGS = 10 Vdc, ID = 5 Adc) (VGS = 10 Vdc, ID = 2.5 Adc, TJ = 150°C) VDS(on) − − − − 2.7 2.6 Vdc Forward Transconductance (VDS = 15 Vdc, ID = 2.5 Adc) gFS 1.5 3.6 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0Vd Ciss − 367 510 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss − 140 200 Transfer Capacitance f = 1.0 MHz) Crss − 29 60 SWITCHING CHARACTERISTICS (Note 4.) Turn−On Delay Time td(on) − 11 20 ns Rise Time (VDD = 30 Vdc, ID = 5 Adc, VGS =10Vdc tr − 26 50 Turn−Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) td(off) − 17 30 Fall Time RG 9.1 Ω) tf − 19 40 Gate Charge (S Fi 8) QT − 12 20 nC (See Figure 8) (VDS = 48 Vdc, ID = 5 Adc, Q1 − 3.0 − (VDS 48 Vdc, ID 5 Adc, VGS = 10 Vdc) Q2 − 5.0 − Q3 − 5.0 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 5 Adc, VGS = 0 Vdc) (IS = 5 Adc, VGS = 0 Vdc, TJ = 150°C) VSD − − 1.72 1.34 3.5 − Vdc Reverse Recovery Time trr − 97 − ns (I 5 Adc V 0 Vdc ta − 73 − (IS = 5 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) tb − 24 − Reverse Recovery Stored Charge dIS/dt = 100 A/µs) QRR − 0.42 − µC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 ″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) LS − 7.5 − nH 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. |
Similar Part No. - MTD5P06V_03 |
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Similar Description - MTD5P06V_03 |
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