ELECTRICAL CHARACTERISTICS: T
C = 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS: T
C = 25° unless otherwise noted
STATIC P/N OM6009SA / OM6109SA
STATIC P/N OM6010SA / OM6110SA
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
V
V
GS = 0,
BV
DSS
Drain-Source Breakdown
200
V
V
GS = 0,
Voltage
I
D = 250 mA
Voltage
I
D = 250 mA
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mAVGS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mA
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = 20 V
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = 20 V
I
GSSR
Gate-Body Leakage Reverse
-100
nA
V
GS = - 20 V
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS = - 20 V
I
GSS
Gate-Body Leakage (OM6109)
± 500
nA
V
GS = ± 12.8 V
I
GSS
Gate-Body Leakage (OM6110)
± 500
nA
V
GS = ± 12.8 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
T
C = 125° C
T
C = 125° C
I
D(on)
On-State Drain Current1
22
A
V
DS
2 V
DS(on), VGS = 10 V
I
D(on)
On-State Drain Current1
18
A
V
DS
2 V
DS(on), VGS = 10 V
V
DS(on)
Static Drain-Source On-State
1.275 1.425
V
V
GS = 10 V, ID = 15 A
V
DS(on)
Static Drain-Source On-State
1.4
1.8
V
V
GS = 10 V, ID = 10 A
Voltage1
Voltage1
R
DS(on)
Static Drain-Source On-State
.085 .095
V
GS = 10 V, ID = 15 A
R
DS(on)
Static Drain-Source On-State
0.14
0.18
V
GS = 10 V, ID = 10 A
Resistance1
Resistance1
R
DS(on)
Static Drain-Source On-State
.130 .155
V
GS = 10 V, ID = 15 A,
R
DS(on)
Static Drain-Source On-State
0.28
0.36
V
GS = 10 V, ID = 10 A,
Resistance1
T
C = 125 C
Resistance1
T
C = 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance1
10.0
S(W )
V
DS
2 V
DS(on), ID = 15 A
g
fs
Forward Transductance1
6.0
S(W )
V
DS
2 V
DS(on), ID = 10 A
C
iss
Input Capacitance
1275
pF
V
GS = 0
C
iss
Input Capacitance
1000
pF
V
GS = 0
C
oss
Output Capacitance
550
pF
V
DS = 25 V
C
oss
Output Capacitance
250
pF
V
DS = 25 V
C
rss
Reverse Transfer Capacitance
160
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
100
pF
f = 1 MHz
T
d(on)
Turn-On Delay Time
16
ns
V
DD = 30 V, ID = 5 A
T
d(on)
Turn-On Delay Time
17
ns
V
DD = 75 V, ID @ 18 A
t
r
Rise Time
19
ns
R
g = 5 W , VGS = 10 V
t
r
Rise Time
52
ns
R
g = 5 W , VGS = 10 V
T
d(off)
Turn-Off Delay Time
42
ns
T
d(off)
Turn-Off Delay Time
36
ns
t
f
Fall Time
24
ns
t
f
Fall Time
30
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 27
A
Modified MOSPOWER
I
S
Continuous Source Current
- 18
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current1
- 108
A
the integral P-N
I
SM
Source Current1
- 72
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage1
- 2.5
V
T
C = 25 C, IS = -24 A, VGS = 0
V
SD
Diode Forward Voltage1
- 2
V
T
C = 25 C, IS = -18 A, VGS = 0
t
rr
Reverse Recovery Time
200
ns
T
J = 150 C,IF = IS,trr
Reverse Recovery Time
350
ns
T
J = 150 C,IF = IS,
dl
F/ds = 100 A/ms
dl
F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
(MOSFET) switching times are
essentially independent of
operating temperature.
G
D
S
G
D
S
(MOSFET) switching times are
essentially independent of
operating temperature.
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