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NTE917 Datasheet(PDF) 2 Page - NTE Electronics |
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NTE917 Datasheet(HTML) 2 Page - NTE Electronics |
2 / 4 page Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD Any One Transistor 300mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Package 750mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derat Above +55 °C 6.67mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Temperature Range, Topr −40 ° to +85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg −65 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL +265 °C . . . . . . . . . . . The following ratings apply for each transistor in the device: Collector−Emitter Voltage, VCEO 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector−Base Voltage, VCBO 20V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector−Substrate Voltage (Note 1), VCIO 20V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter−Base Voltage, VEBO 9V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC 50mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide for normal transistor action. The substrate should be maintained at signal (AC) GND by means of a suitable grounding capacitor, to avoid undesired coupling between transistors. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics For Each Differential Amplifier Input Offset Voltage VIO VCB = 3V, I I 2mA − 0.45 5.0 mV Input Offset Current IIO IE(Q3) = IE(Q4) = 2mA − 0.3 2.0 µA Input Bias Current II − 10 24 µA Quiescent Operating Current Ratio IC(Q1) IC(Q2) IC(Q5) IC(Q6) or 0.98 to 1.02 (Typ) Temperature Coefficient Magnitude of Input Offset Voltage ∆VIO ∆T − 1.1 − µV/°C For Each Transistor DC Forward Base−Emitter Voltage VBE VCB = 3V IC = 50µA − 0.630 0.70 V IC = 1mA − 0.715 0.80 V IC = 3mA − 0.750 0.85 V IC = 10mA − 0.800 0.90 V Temperature Coefficient of Base−Emitter Voltage ∆VBE ∆T VCB = 3V, IC = 1mA − −1.9 − µV/°C Collector Cutoff Current ICBO VCB = 10V, IE = 0 − 0.002 100 nA Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 − V Collector−Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 20 60 − V Collector−Substrate Breakdown Voltage V(BR)CIO IC = 10µA, ICI = 0 20 60 − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 − V |
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Similar Description - NTE917 |
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