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NCV3065 Datasheet(PDF) 3 Page - ON Semiconductor |
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NCV3065 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 18 page NCP3065, NCV3065 http://onsemi.com 3 MAXIMUM RATINGS (measured vs. pin 4, unless otherwise noted) Rating Symbol Value Unit VCC (Pin 6) VCC 0 to +40 V Comparator Inverting Input (Pin 5) VCII -0.2 to +VCC V Darlington Switch Collector (Pin 1) VSWC 0 to +40 V Darlington Switch Emitter (Pin 2) (Transistor OFF) VSWE -0.6 to +VCC V Darlington Switch Collector to Emitter (Pins 1-2) VSWCE 0 to +40 V Darlington Switch Current ISW 1.5 A Ipk Sense (Pin 7) VIPK -0.2 to VCC + 0.2 V Timing Capacitor (Pin 3) VTCAP -0.2 to +1.4 V Power Dissipation and Thermal Characteristics PDIP-8 (Note 5) Thermal Resistance Junction-to-Air RqJA 100 °C/W SOIC-8 (Note 5) Thermal Resistance Junction-to-Air RqJA 180 °C/W DFN-8 (Note 5) Thermal Resistance Junction-to-Air Thermal Resistance Junction-to-Case RqJA RqJC 78 14 °C/W Storage Temperature Range TSTG -65 to +150 °C Maximum Junction Temperature TJ(MAX) +150 °C Operating Junction Temperature Range (Note 3) NCP3065, NCV3065 TJ -40 to +125 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series contains ESD protection and exceeds the following tests: Pin 1-8: Human Body Model 2000 V per AEC Q100-002; 003 or JESD22/A114; A115 Machine Model Method 200 V 2. This device contains latch-up protection and exceeds 100 mA per JEDEC Standard JESD78. 3. The relation between junction temperature, ambient temperature and Total Power dissipated in IC is TJ = TA + Rq • PD 4. The pins which are not defined may not be loaded by external signals 5. 1 oz copper, 1 in2 copper area |
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Similar Description - NCV3065 |
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