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MBRS1100T3 Datasheet(PDF) 1 Page - ON Semiconductor

Part # MBRS1100T3
Description  Schottky Power Rectifier Surface Mount Power Package
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBRS1100T3 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 9
1
Publication Order Number:
MBRS1100T3/D
MBRS1100T3, MBRS190T3
Preferred Devices
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical
to the system. These state-of-the-art devices have the following
features:
Features
Pb−Free Packages are Available
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage − 100 Volts
175°C Operating Junction Temperature
Guardring for Stress Protection
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2500 units per reel
Cathode Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBRS190T3
MBRS1100T3
VRRM
VRWM
VR
90
100
V
Average Rectified Forward Current
TL = 163°C
TL = 148°C
IF(AV)
1.0
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
50
A
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Voltage Rate of Change
dv/dt
10
V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
SMB
CASE 403A
PLASTIC
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
90, 100 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
AYW
B1x
G
http://onsemi.com
B1
= Device Code
x
= C for MBRS1100T3
9 for MBRS190T3
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION


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