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MBRS1100T3 Datasheet(PDF) 1 Page - ON Semiconductor |
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MBRS1100T3 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 9 1 Publication Order Number: MBRS1100T3/D MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state-of-the-art devices have the following features: Features • Pb−Free Packages are Available • Small Compact Surface Mountable Package with J-Bend Leads • Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction • High Blocking Voltage − 100 Volts • 175°C Operating Junction Temperature • Guardring for Stress Protection Mechanical Characteristics • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds • Shipped in 12 mm Tape and Reel, 2500 units per reel • Cathode Polarity Band MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBRS190T3 MBRS1100T3 VRRM VRWM VR 90 100 V Average Rectified Forward Current TL = 163°C TL = 148°C IF(AV) 1.0 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Operating Junction Temperature (Note 1) TJ −65 to +175 °C Voltage Rate of Change dv/dt 10 V/ns Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. SMB CASE 403A PLASTIC SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 90, 100 VOLTS Preferred devices are recommended choices for future use and best overall value. MARKING DIAGRAM AYW B1x G http://onsemi.com B1 = Device Code x = C for MBRS1100T3 9 for MBRS190T3 A = Assembly Location Y = Year W = Work Week G = Pb−Free Package See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION |
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