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HSL226 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # HSL226
Description  Silicon Schottky Barrier Diode for High Speed Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HSL226 Datasheet(HTML) 2 Page - Renesas Technology Corp

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HSL226
Rev.3.00 Feb 06, 2007 page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
25
V
Non-Repetitive Peak forward surge current
IFSM *
200
mA
Forward current
IF
50
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note
: 10 ms Sine Wave 1 pulse
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
VF1
0.33
V
IF = 1 mA
Forward voltage
VF2
0.38
V
IF = 5 mA
Reverse current
IR
450
nA
VR = 20 V
Capacitance
C
2.80
pF
VR = 1 V, f = 1 MHz
Note
: For EFP package, the material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is
considered as unquestioned. Please kindly consider soldering nature.


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