GMPCR06

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ISSUED DATE :2005/12/21

REVISED DATE :2006/03/29B

G

S E N S I T I V E G AT E S I L I C O N C O NT R O L L ED R E C T I F I E R S

R E V E R S E B L O C K I N G T H Y R I S T O R S 0 . 8 A , 4 0 0 V

Description

The GMPCR06 PNPN device is designed for high volume, line-powered applications such as relay and lamp

drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

Features

&

On-state Current Rating of 0.8A RMS at 80 :

&

High Surge Current Capability 10A

&

Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design

&

Immunity to dV/dt - 20 V/ sec Minimum at 110 :

&

Glass-Passivated Surface for Reliability and Uniformity

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5°TYP.

M

0.70 REF.

Rating

Symbol

Value

Unit

Peak Repetitive Off-State Voltage(Note1)

400

V

0.8

A

10

A

Circuit Fusing Consideration (t=8.3ms)

0.415

100

mW

10

mW

1.0

A

5.0

V

-40 ~ +110

:

Storage Temperature Rage

-40 ~ +150

:

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress

limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device function operation is

not implied, damage may occur and reliability may be affected.

Note 1.

however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall

not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

SOT-89