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ML6XX16 SERIES

TYPE

NAME

ML60116R , ML64116R

MITSUBISHI LASER DIODES

FOR OPTICAL INFORMATION SYSTEMS

DESCRIPTION

ML6XX16 is a high power AlGaAs semiconductor laser which

provides a stable, single transverse mode oscillation with

emission wavelength of 785nm and standard light output of

30mW.

ML6XX16 is produced by the MOCVD crystal growth method

which is excellent in mass production and characteristics

uniformity. This is a high -performance, highly reliable, and

long life semiconductor laser.

FEATURES

°C)

Optical disc drive ( rewritable , write once)

APPLICATION

Note 3: Applicable to ML64116R

MITSUBISHI

ELECTRIC

Symbol

Parameter

Conditions

Ratings

Unit

Po

Light output power

CW

40

mW

Pulse(Note 2)

50

VRL

Reverse voltage (laser diode)

-

2

V

VRD

Reverse voltage (Photodiode)

-

30

V

IFD

Forward current (Photodiode)

-

10

mA

Tc

Case temperature

-

-40

Tstg

Storage temperature

-

-55

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Ith

Threshold current

CW

-

30

50

mA

Iop

Operation current

CW,Po=30mW

-

80

110

mA

η

Slope efficiency

0.40

0.55

0.75

mW/mA

Vop

Operating voltage

2.0

2.5

V

λp

Peak wavelength

770

785

800

nm

Beam divergence angle

(parallel)

810

13

°

Beam divergence angle

(perpendicular)

25

28

°

Im

Monitoring output current

(Photodiode)

CW,Po=30mW,VRD=1V

RL=10

Ω (Note 4)

-

0.2

-

mA

ID

Dark current (Photodiode)

VRD=10V

--

0.5

uA

Ct

Capacitance (Photodiode)

VRD=5V

-7

-

pF

CW,Po=30mW

CW,Po=30mW

CW,Po=30mW

CW,Po=30mW

CW,Po=30mW

as of December '99

Note 4: RL=the load resistance of photodiode

Im(Note 3)

• Output 30mW (CW) 40mW (pulse)

• Short astigmatic distance

• MQW * active layer

* : Multiple Quantum Well

22

Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,

and this does not mean the guarantee of its lifetime.As for the reliability,please refer to the reliability report from Mitsubishi

Semiconductor Quality Assurance Department.

Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1ms

°C

°C

0.5

--

Built-in monitor photodiode

θ//

θ⊥