GMA42M datasheet(1/2 Pages) GTM

Part #	GMA42M

Description	NPN PLASTI-ENCAPSULATE TRANSISTOR

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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GMA42M

1/2

ISSUED DATE :2004/12/03

REVISED DATE :

G

G M

M A

A4422M

M

N

N P

P N

N P

P L

L A

A S

S T

T II -- E

E N

N C

C A

A P

P S

S U

U L

L A

A T

T E

E T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GMA42M is designed for application requires for high voltage.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage

VCBO

300

V

Collector to Emitter Voltage

VCEO

300

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current

IC

500

mA

PD

500

mW

Total Device Dissipation FR-5 Board(Note1)

PD(Derate above 25 : )

4.0

mW/ :

Thermal Resistance, Junction to Ambient

(1)

R JA

250

: /W

Note 1: FR-5=1.0*0.75*0.062in

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

300

-

V

IC=100uA

BVCEO

300

-

V

IC=1mA

BVEBO

5

-

V

IE=100uA

ICBO

-

250

nA

VCB=200V

IEBO

-

100

nA

VEB=5V

VCE(sat)

-

200

mV

IC=20mA, IB=2mA

VBE(sat)

-

900

mV

IC=20mA, IB=2mA

hFE1

60

-

VCE=10V, IC=1mA

hFE2

80

-

250

VCE=10V, IC=10mA

hFE3

75

-

VCE=10V, IC=30mA

fT

50

-

MHZ

VCE=20V,IC=10mA,f=30MHZ

Classification Of hFE2

Rank

A

B1

B2

C

hFE

80-100

100-150

150-200

200-250

SOT-89

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