R1LV0408DSB-7LR datasheet(6/14 Pages) RENESAS

Part #	R1LV0408DSB-7LR

Description	4M SRAM (512-kword 횞 8-bit)

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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6 / 14 page

R1LV0408D Series

DC Characteristics

Parameter

Symbol

Min

Typ

Max Unit

Test conditions

Input leakage current

|I

LI|



1

µA Vin = V

SS to VCC

Output leakage current

|I

LO|



1

µA CS# = V

IH or OE# = VIH or

WE# = V

IL or VI/O = VSS to VCC

Operating current

I

CC



10

mA CS# = V

IL,

Others = V

IH/ VIL, II/O = 0 mA

I

CC1



25

mA Min. cycle, duty = 100%,

CS# = V

IL, Others = VIH/VIL

I

I/O = 0 mA

Average operating current

I

CC2



5

mA Cycle time = 1

µs,

duty = 100%,

I

I/O = 0 mA, CS# ≤ 0.2 V,

V

IH ≥ VCC − 0.2 V, VIL ≤ 0.2 V

Standby current

I

SB



0.1*

1

0.3

mA CS# = V

IH

to +85

°C

I

SB1



10

µA

to +70

°C

I

SB1



8

µA

to +40

°C

I

SB1



3

µA

−5S%

to +25

°C

I

SB1



1*

1

2.5

µA

to +85

°C

I

SB1



20

µA

to +70

°C

I

SB1



16

µA

to +40

°C

I

SB1



10

µA

Standby

current

−7L%

to +25

°C

I

SB1



1*

1

10

µA

Vin

≥ 0 V, CS# ≥ V

CC − 0.2 V

Average values

V

OL



0.4

V

I

OL = 2.1 mA

Output low voltage

V

OL2



0.2

V

I

OL = 100 µA

V

OH

2.4



V

I

OH = −1.0 mA

Output high voltage

V

OH2

V

CC − 0.2



V

I

OH = −0.1 mA

Note:

1. Typical values are at V

CC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed.

Capacitance

(Ta = +25

°C, f = 1.0 MHz)

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Note

Input capacitance

Cin



8

pF

Vin = 0 V

1

Input/output capacitance

C

I/O



10

pF

V

I/O = 0 V

1

Note:

1. This parameter is sampled and not 100% tested.

Rev.1.00, May.24.2007, page 6 of 12

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R1LV0408DSB-7LR Datasheet(PDF) 6 Page - Renesas Technology Corp

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