GL5551 datasheet(1/2 Pages) GTM

Part #	GL5551

Description	NPN EPITAXIAL PLANAR TRANSISTOR

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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G

G L

L 55555511

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O

R

Description

The GL5551 is designer for general purpose applications requiring high breakdown voltages.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13 C

TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0 C

10 C

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage

VCBO

180

V

Collector to Emitter Voltage

VCEO

160

V

Emitter to Base Voltage

VEBO

6

V

Collector Current

IC

600

mA

Total Power Dissipation

PD

1.5

W

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

180

-

V

IC=100uA, IE=0

BVCEO

160

-

V

IC=1.0Ma, IB=0

BVEBO

6

-

V

IE=10uA, IC=0

ICBO

-

50

nA

VCB=120V , IE=0

IEBO

-

50

nA

VEB=4V , IC=0

VCE(sat)1

-

0.15

V

IC=10mA, IB=1.0mA

VCE(sat)2

-

0.2

V

IC=50mA, IB=5mA

VBE(sat)1

-

1

V

IC=10mA, IB=1mA

VBE(sat)2

-

1

V

IC=50mA, IB=5mA

hFE1

80

-

VCE=5V, IC=1mA

hFE2

80

160

400

VCE=5V, IC=10mA

hFE3

50

-

VCE=5V, IC=50mA

fT

100

-

300

MHz

VCE=10V, IC=10mA, f=100MHz

Cob

-

6

pF

VCB=10V, IE=0, f=1MHz

Classification Of hFE

Rank

A

N

C

Range

80 - 200

100 - 250

160 - 400

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