GL4403 datasheet(1/2 Pages) GTM

Part #	GL4403

Description	PNP EPITAXIAL PLANAR TRANSISTOR

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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ISSUED DATE :2004/12/17

REVISED DATE :

GL4403

P

P N

N P

P E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GL4403 is designed for general purpose switching and amplifier applications.

Features

&Complementary to GL4401

&High Power Dissipation: 1500mW at 25

&High DC Current Gain: 100-300 at 150mA

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13 C

TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0 C

10 C

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage at Ta=25 :

VCBO

-40

V

Collector to Emitter Voltage at Ta=25 :

VCEO

-40

V

Emitter to Base Voltage at Ta=25 :

VEBO

-5

V

Collector Current at Ta=25 :

IC

-600

mA

Total Power Dissipation at Ta=25 :

PD

1.5

W

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

-

V

IC=-100uA

BVCEO

-40

-

V

IC=-1mA

BVEBO

-5

-

V

IE=-10uA

ICEX

-

-100

nA

VCE=-35V, VBE=-0.4V

*VCE(sat)1

-

-400

mV

IC=-150mA, IB=-15mA

*VCE(sat)2

-

-750

mV

IC=-500mA, IB=-50mA

*VBE(sat)1

-750

-

-950

mV

IC=-150mA, IB=-15mA

*VBE(sat)2

-

-1.3

V

IC=-500mA, IB=-50mA

*hFE1

30

-

VCE=-1V, IC=-0.1mA

*hFE2

60

-

VCE=-1V, IC=-1mA

*hFE3

100

-

VCE=-1V, IC=-10mA

*hFE4

100

-

300

VCE=-2V, IC=-150mA

*hFE5

20

-

VCE=-2V, IC=-500mA

fT

200

-

MHz

VCE=-10V, IC=-20mA, f=100MHz

Cob

-

8.5

pF

VCE=-10V, f=1MHz

Classification Of hFE4

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Rank

A

B

Range

100-210

190-300

SOT-223

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