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CM1690-06DE Datasheet(PDF) 3 Page - California Micro Devices Corp |
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CM1690-06DE Datasheet(HTML) 3 Page - California Micro Devices Corp |
3 / 7 page © 2007 California Micro Devices Corp. All rights reserved. 06/25/07 490 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.cmd.com 3 CM1690 Specifications Note 1: TA=25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin (i.e. if ESD is applied to pin A1 then clamping voltage is measured at pin C1). Unused pins are left open. Note 4: These parameters are guaranteed by design and characterization. ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Storage Temperature Range –65 to +150 °C Current per Inductor 30 mA DC Package Power Rating 500 mW STANDARD OPERATING CONDITIONS PARAMETER RATING UNITS Operating Temperature Range –40 to +85 °C ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE1) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS L Channel Inductance 12 nH CTOTAL Total Channel Capacitance At 2.5VDC Reverse Bias, 1MHz, 30mVAC 25 33 40 pF C Capacitance C1 At 2.5VDC Reverse Bias, 1MHz, 30mVAC 16.5 pF VDIODE Standoff Voltage IDIODE = 10μA6.0 V ILEAK Diode Leakage Current (reverse bias) VDIODE = +3.3V 0.1 0.3 μA VSIG Signal Clamp Voltage Positive Clamp Negative Clamp ILOAD = 10mA ILOAD = –10mA 5.6 –1.5 6.8 –0.8 9.0 –0.4 V V VESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 Notes 2, 3 and 4 ±30 ±15 kV kV RDYN Dynamic Resistance Positive Negative 2.3 0.9 fC Roll-off Frequency at -6dB Attenuation ZSOURCE = 50Ω, ZLOAD = 50Ω 330 MHz RINSULATION Insulation Resistance VDIODE=3.3V, Note 4 10 ΜΩ RCHANNEL Channel Resistance 8 Ω Ω Ω |
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