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NP160N04TUG-E2-AY Datasheet(PDF) 5 Page - NEC

Part # NP160N04TUG-E2-AY
Description  MOS FIELD EFFECT TRANSISTOR
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NP160N04TUG-E2-AY Datasheet(HTML) 5 Page - NEC

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Data Sheet D18754EJ1V0DS
5
NP160N04TUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0
1
2
3
4
5
-75
-25
25
75
125
175
225
VGS = 10 V
ID = 80 A
Pulsed
Tch - Channel Temperature -
°C
100
1000
10000
100000
0.01
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1
10
100
1000
0.1
1
10
100
1000
tr
td(off)
td(on)
tf
VDD = 20 V
VGS = 10 V
RG = 0
Ω
ID - Drain Current - A
0
5
10
15
20
25
30
35
40
0
50
100
150
200
0
3
6
9
12
VDS
ID = 160 A
Pulsed
VGS
VDD = 32 V
15 V
8 V
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
0.1
1
10
100
1000
0
0.5
1
1.5
VGS = 10 V
0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
1
10
100
1000
0.1
1
10
100
1000
di/dt = 100 A/
μs
VGS = 0 V
IF - Diode Forward Current - A


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