GISD1802 datasheet(1/3 Pages) GTM

Part #	GISD1802

Description	PNP EPITAXIAL PLANAR SILICON TRANSISTOR

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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G

ISD1802

Page: 1/3

ISSUED DATE :2005/01/13

REVISED DATE :

G

G IIS

S D

D 11880022

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R S

S II L

L II C

C O

O N

N T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GISD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.

Features

*Adoption of FBET, MBIT processes

*Large current capacity and wide ASO

*Low collector-to-emitter saturation voltage

*Fast switching speed

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.40

6.80

G

0.50

0.70

B

5.20

5.50

H

2.20

2.40

C

6.80

7.20

J

0.45

0.55

D

7.20

7.80

K

0.45

0.60

E

2.30 REF.

L

0.90

1.50

F

0.60

0.90

M

5.40

5.80

Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)

:

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

6

V

Collector Current(DC)

IC

3

A

Collector Current(Pulse)

ICP

6

A

PD

1

W

Collector Dissipation

Tc=25 :

20

W

Electrical Characteristics (Ta = 25 : unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

V(BR)CBO

60

-

V

IC=10uA, IE=0

V(BR)CEO

50

-

V

IC=1mA, RBE=

V(BR)EBO

6

-

V

IE=10uA, IC=0

ICBO

-

1

A

VCB=40V, IE=0

IEBO

-

1

A

VEB=4V, IC=0

VCE(sat)

-

0.19

0.5

V

IC=2A, IB=0.1A

VBE(sat)

-

0.94

1.2

V

IC=2A, IB=0.1A

hFE1

100

-

560

VCE=2V, IC=0.1A

hFE2

35

-

VCE=2V, IC=3A

fT

-

150

-

MHZ

VCE=10V,IC=50mA

ton

-

70

-

ns

See test circuit

tstg

-

650

-

ns

See test circuit

tf

-

35

-

ns

See test circuit

Cob

-

25

-

pF

VCB=10V, f=1MHz

TO-251

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