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DS1315S-5 Datasheet(PDF) 10 Page - Dallas Semiconductor |
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DS1315S-5 Datasheet(HTML) 10 Page - Dallas Semiconductor |
10 / 22 page DS1315 Phantom Time Chip 10 of 22 DC POWER DOWN ELECTRICAL CHARACTERISTICS (0°C to 70°C; VCC < 4.5V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES CEO Output Voltage VCEO VCCI-0.2 or VBAT1,2 -0.2 V 8 VBAT1 or VBAT2 Battery Current IBAT 0.5 µA 6 Battery Backup Current @ VCCO = VBAT-0.2V ICCO2 10 µA 9 AC ELECTRICAL OPERATING CHARACTERISTICS ROM/RAM = GND (0°C to 70°C; VCC = 5.0 ± 10%) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Read Cycle Time tRC 65 ns CEI Access Time tCO 55 ns OE Access Time tOE 55 ns CEI to Output Low Z tCOE 5 ns OE to Output Low Z tOEE 5 ns CEI to Output High Z tOD 25 ns OE to Output High Z tODO 25 ns Read Recovery tRR 10 ns Write Cycle tWC 65 ns Write Pulse Width tWP 55 ns Write Recovery tWR 10 ns 4 Data Setup tDS 30 ns 5 Data Hold Time tDH 0 ns 5 CEI Pulse Width tCW 55 ns OE Pulse Width tOW 55 ns RST Pulse Width tRST 65 ns |
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