U635H64

2

March 31, 2006

STK Control #ML0052

Rev 1.0

Block Diagram

Operating Mode

E

W

G

DQ0 - DQ7

Standby/not selected

H

**

High-Z

Internal Read

L

H

H

High-Z

Read

L

H

L

Data Outputs Low-Z

Write

L

L

*

Data Inputs High-Z

Truth Table for SRAM Operations

a:

Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress

rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is

not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Symbol

Min.

Max.

Unit

Power Supply Voltage

-0.5

7

V

Input Voltage

-0.3

V

Output Voltage

-0.3

V

Power Dissipation

1W

Operating Temperature

C-Type

K-Type

0

-40

70

85

°C

°C

Storage Temperature

-65

150

°C

Characteristics

All characteristics are valid in the power supply voltage range and in the operating temperature range specified.

Dynamic measurements are based on a rise and fall time of

≤ 5 ns, measured between 10 % and 90 % of V

EEPROM Array

128 x (64 x 8)

STORE

RECALL

SRAM

Array

128 Rows x

64 x 8 Columns

A5

A6

A7

A8

A9

A11

A12

A0 - A12

Store/

Recall

Control

G

E

W

Software

Detect

Power

Control

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Column I/O

Column Decoder

A0 A1 A2 A3 A4 A10