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TPS65167RHAR Datasheet(PDF) 6 Page - Texas Instruments |
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TPS65167RHAR Datasheet(HTML) 6 Page - Texas Instruments |
6 / 37 page www.ti.com TPS65167 SLVS760A – APRIL 2007 – REVISED MAY 2007 TERMINAL FUNCTIONS (continued) TERMINAL I/O DESCRIPTION NAME NO. FBP 20 Feedback of the positive charge pump POUT 21 Output of the positive charge pump converter VGH 22 Output of the high voltage switch and gate shaping function block DRN 23 Termination of the low side switch of the gate voltage shaping block Control input for the gate voltage shaping block. Connect this pin to REGOUT if the gate voltage shaping CTRL 24 I function is not used. Connecting a capacitor from this pin to GND allows to set the delay time between the boost converter Vs and GDLY 25 O VGH. Note that VGH is controlled by CTRL as well. This is the enable pin of the boost converter Vs, negative charge pump VGL and positive charge pump EN 26 I POUT. This pin is a dual function pin. EN can be held high if no start-up delay is desired or a capacitor can be connected to this pin. The capacitor determines the start-up delay time. Logic control input to force the device into High Voltage Stress Test. With HVS = low the high voltage stress HVS 27 I test disabled. With HVS = high the high voltage stress test is enabled. This resistor sets the voltage of the boost converter Vs when the High Voltage Stress test is enabled. (HVS = RHVS 28 I/O high). With HVS = high the RHVS pin is pulled to GND which sets the voltage for the boost converter during High Voltage Stress. When HVS is disabled (HVS = low) the RHVS pin is high impedance. FB 29 I Feedback of the boost converter Vs Compensation for the regulation loop of the boost converter generating Vs. Typically a 22 nF compensation COMP 30 I/O capacitor is connected to this pin. This is the output of the internal device temperature sensor. The output voltage is proportional to the chip TEMP 31 O temperature. PGND 32, 33 Power Ground for the boost converter Vs SW 34, 35 I/O Switch pin of the boost converter generating Vs GD 36 I/O Gate drive. This pin controls the external isolation MOSFET GND 37 Analog Ground for the internal reference AVIN 38 I Analog input voltage of the device. Bypass this pin with a 0.47 µF bypass capacitor FBLDO 39 I Feedback of the LDO controller BASE 40 I/O BASE drive of the external pnp transistor. PowerPAD™ Analog GND for the internal reference 6 Submit Documentation Feedback |
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