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TPS65167RHAR Datasheet(PDF) 6 Page - Texas Instruments

Part # TPS65167RHAR
Description  Compact LCD Bias Supply for TFT-LCD TV Panels
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
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TPS65167RHAR Datasheet(HTML) 6 Page - Texas Instruments

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TPS65167
SLVS760A – APRIL 2007 – REVISED MAY 2007
TERMINAL FUNCTIONS (continued)
TERMINAL
I/O
DESCRIPTION
NAME
NO.
FBP
20
Feedback of the positive charge pump
POUT
21
Output of the positive charge pump converter
VGH
22
Output of the high voltage switch and gate shaping function block
DRN
23
Termination of the low side switch of the gate voltage shaping block
Control input for the gate voltage shaping block. Connect this pin to REGOUT if the gate voltage shaping
CTRL
24
I
function is not used.
Connecting a capacitor from this pin to GND allows to set the delay time between the boost converter Vs and
GDLY
25
O
VGH. Note that VGH is controlled by CTRL as well.
This is the enable pin of the boost converter Vs, negative charge pump VGL and positive charge pump
EN
26
I
POUT. This pin is a dual function pin. EN can be held high if no start-up delay is desired or a capacitor can
be connected to this pin. The capacitor determines the start-up delay time.
Logic control input to force the device into High Voltage Stress Test. With HVS = low the high voltage stress
HVS
27
I
test disabled. With HVS = high the high voltage stress test is enabled.
This resistor sets the voltage of the boost converter Vs when the High Voltage Stress test is enabled. (HVS =
RHVS
28
I/O
high). With HVS = high the RHVS pin is pulled to GND which sets the voltage for the boost converter during
High Voltage Stress. When HVS is disabled (HVS = low) the RHVS pin is high impedance.
FB
29
I
Feedback of the boost converter Vs
Compensation for the regulation loop of the boost converter generating Vs. Typically a 22 nF compensation
COMP
30
I/O
capacitor is connected to this pin.
This is the output of the internal device temperature sensor. The output voltage is proportional to the chip
TEMP
31
O
temperature.
PGND
32, 33
Power Ground for the boost converter Vs
SW
34, 35
I/O
Switch pin of the boost converter generating Vs
GD
36
I/O
Gate drive. This pin controls the external isolation MOSFET
GND
37
Analog Ground for the internal reference
AVIN
38
I
Analog input voltage of the device. Bypass this pin with a 0.47
µF bypass capacitor
FBLDO
39
I
Feedback of the LDO controller
BASE
40
I/O
BASE drive of the external pnp transistor.
PowerPAD™
Analog GND for the internal reference
6
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