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PT800B Datasheet(PDF) 1 Page - Diotec Semiconductor |
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PT800B Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page  PT800A ... PT800M PT800A ... PT800M Silicon Rectifiers – Single Diode Silizium-Gleichrichter – Einzeldiode Version 2007-07-06 Dimensions - Maße [mm] Nominal current Nennstrom 8 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...1000 V Plastic case Kunststoffgehäuse TO-220AC Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 8 A PT800A 50 50 < 1.0 < 1.1 PT800B 100 100 < 1.0 < 1.1 PT800D 200 200 < 1.0 < 1.1 PT800G 400 400 < 1.0 < 1.1 PT800J 600 600 < 1.0 < 1.1 PT800K 800 800 < 1.0 < 1.1 PT800M 1000 1000 < 1.0 < 1.1 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 8 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 135/150 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 90 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+175°C 1 Tj = 25°C 2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 10±0.2 1.5 0.9 5.08 3.8 Type Typ 1 2 3 4 1 2 3 4 |
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Similar Description - PT800B |
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