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TC10723.0VCT713 Datasheet(PDF) 7 Page - Microchip Technology |
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TC10723.0VCT713 Datasheet(HTML) 7 Page - Microchip Technology |
7 / 22 page © 2007 Microchip Technology Inc. DS21354D-page 7 TC1072/TC1073 Note: Unless otherwise specified, all parts are measured at temperature = +25°C. VOUT Measure Rise Time of 3.3V LDO with Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Rise Time = 448μS VSHDN Measure Fall Time of 3.3V LDO with Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 470pF, ILOAD = 50mA VIN = 4.3V, Temp = 25°C, Fall Time = 100μS VOUT VSHDN Measure Rise Time of 3.3V LDO without Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Rise Time = 184μS VOUT VSHDN Measure Fall Time of 3.3V LDO without Bypass Capacitor Conditions: CIN = 1μF, COUT = 1μF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Fall Time = 52μS VOUT VSHDN |
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