J308 datasheet(3/6 Pages) ONSEMI

Part #	J308

Description	JFET VHF/UHF Amplifiers

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J308

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C1 = C2 = 0.8 − 10 pF, JFD #MVM010W.

C3 = C4 = 8.35 pF Erie #539−002D.

C5 = C6 = 5000 pF Erie (2443−000).

C7 = 1000 pF, Allen Bradley #FA5C.

RFC = 0.33 μH Miller #9230−30.

L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core).

L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core).

L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core).

50

Ω

SOURCE

50

Ω

LOAD

U310

C3

C2

C6

C7

C4

1.0 k

RFC

L1

L2P

L2S

+VDD

C1

C5

Figure 1. 450 MHz Common−Gate Amplifier Test Circuit

70

60

50

40

30

20

−5.0

−4.0

−3.0

−2.0

−1.0

0

ID − VGS, GATE−SOURCE VOLTAGE (VOLTS)

10

0

70

60

50

40

30

20

10

IDSS − VGS, GATE−SOURCE CUTOFF VOLTAGE (VOLTS)

Figure 2. Drain Current and Transfer

Characteristics versus Gate−Source Voltage

VDS = 10 V

IDSS

+25

°C

TA = −55°C

+25

°C

+25

°C

−55

°C

+150

°C

+150

°C

VGS, GATE−SOURCE VOLTAGE (VOLTS)

5.0

4.0

3.0

2.0

1.0

0

35

30

25

20

15

10

5.0

0

Figure 3. Forward Transconductance

versus Gate−Source Voltage

VDS = 10 V

f = 1.0 MHz

TA = −55°C

+25

°C

+150

°C

+25

°C

−55

°C

+150

°C

ID, DRAIN CURRENT (mA)

100 k

10 k

1.0 k

100

1.0 k

100

10

1.0

0.01

0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100

VGS(off) = −2.3 V =

VGS(off) = −5.7 V =

Figure 4. Common−Source Output

Admittance and Forward Transconductance

versus Drain Current

Yfs

Yos

VGS, GATE SOURCE VOLTAGE (VOLTS)

5.0

4.0

3.0

2.0

1.0

0

6.0

7.0

8.0

9.0

10

7.0

4.0

1.0

0

120

96

72

48

24

0

RDS

Cgs

Cgd

Figure 5. On Resistance and Junction

Capacitance versus Gate−Source Voltage

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