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GM2301
Page: 2/4
ISSUED DATE :2006/01/20
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.1
-
V/ :
Reference to 25 , I
:
D=-1mA
Gate Threshold Voltage
VGS(th)
-0.5
-
-
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
4.4
-
S
VDS=-5V, ID=-2.8A
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
:
-
-
-1
uA
VDS=-20V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
-
-10
uA
VDS=-16V, VGS=0
-
-
130
VGS=-5.0V, ID=-2.8A
Static Drain-Source On-Resistance
RDS(ON)
-
-
190
m
VGS=-2.8V, ID=-2.0A
Total Gate Charge2
Qg
-
5.2
10
Gate-Source Charge
Qgs
-
1.36
-
Gate-Drain (“Miller”) Change
Qgd
-
0.6
-
nC
ID=-2.8A
VDS=-6V
VGS=-5V
Turn-on Delay Time2
Td(on)
-
5.2
-
Rise Time
Tr
-
9.7
-
Turn-off Delay Time
Td(off)
-
19
-
Fall Time
Tf
-
29
-
ns
VDS=-15V
ID=-1A
VGS=-10V
RG=6
RD=15
Input Capacitance
Ciss
-
295
-
Output Capacitance
Coss
-
170
-
Reverse Transfer Capacitance
Crss
-
65
-
pF
VGS=0V
VDS=-6V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-
-1.2
V
IS=-1.6A, VGS=0V, Tj=25 :
Continuous Source Current (Body Diode)
IS
-
-
-1
A
VD=VG=0V, VS=-1.2V
Pulsed Source Current (Body Diode)
1
ISM
-
-
-10
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
10sec.
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