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KTC9013S Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTC9013S
Description  EPITAXIAL PLANAR NPN TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2002. 9. 3
1/1
SEMICONDUCTOR
TECHNICAL DATA
KTC9013S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent hFE Linearity.
Complementary to KTC9012S.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
E
1
2
3
B
1.30 MAX
LL
PP
P7
+_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
500
mA
Emitter Current
IE
-500
mA
Collector Power Dissipation
PC *
350
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=35V, IE=0
-
-
0.1
A
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
0.1
A
DC Current Gain
hFE (Note)
VCE=1V, IC=50mA
96
-
246
Collector-Emitter Saturation Voltage
VCE(sat)
IC=100mA, IB=10mA
-
0.1
0.25
V
Base-Emitter Voltage
VBE
IC=100mA, VCE=1V
0.8
1.0
V
Transition Frequency
fT
VCE=6V, IC=20mA, f=100MHz
140
-
-
MHz
Collector Output Capacitance
Cob
VCB=6V, IE=0, f=1MHz
-
7.0
-
pF
Note : hFE Classification F:96 135, G:118 166, H:144 202, I:176 246
h
Rank
Type Name
Marking
Lot No.
BC
FE
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )




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