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SPP6507S26RG Datasheet(PDF) 1 Page - SYNC POWER Crop. |
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SPP6507S26RG Datasheet(HTML) 1 Page - SYNC POWER Crop. |
1 / 8 page 2006/08/10 Ver.1 Page 1 SPP6507 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPP6507 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES PIN CONFIGURATION( SOT-23-6L ) PART MARKING P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V -30V/-2.5A,RDS(ON)=115mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V -30V/-1.0A,RDS(ON)=215mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design |
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