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ARF448A Datasheet(PDF) 1 Page - Advanced Power Technology |
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ARF448A Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 4 page MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS V DS(ON) I DSS I GSS g fs V GS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, ID = 250 mA) On State Drain Voltage 1 (I D(ON) = 7.5A, VGS = 10V) Zero Gate Voltage Drain Current (V DS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (V DS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (V GS = ±30V, VDS = 0V) Forward Transconductance (V DS = 25V, ID = 7.5A) Gate Threshold Voltage (V DS = VGS, ID = 50mA) MIN TYP MAX 450 3 25 250 ± 100 5 8.5 2 5 UNIT Volts mA nA mhos Volts Symbol V DSS V DGO I D V GS P D RqJC T J,TSTG T L Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ T C = 25°C Gate-Source Voltage Total Power Dissipation @ T C = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF448A/448B 450 450 15 ± 30 230 0.55 -55 to 150 300 UNIT Volts Amps Volts Watts ° C/W ° C RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 150 Volt, 40.68 MHz Characteristics: ¥ Output Power = 140 Watts. ¥ Gain = 15dB (Class C) ¥ Efficiency = 75% Low Cost Common Source RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. TO-247 ARF448A ARF448B G D S Common Source CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com |
Similar Part No. - ARF448A_03 |
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Similar Description - ARF448A_03 |
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