MAXIMUM RATINGS

All Ratings: T

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

V

I

DSS

I

GSS

g

fs

V

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Forward Transconductance (V

Gate Threshold Voltage (V

MIN

TYP

MAX

450

3

25

250

±

100

5

8.5

2

5

UNIT

Volts

mA

nA

mhos

Volts

Symbol

V

DSS

V

DGO

I

D

V

GS

P

D

T

T

L

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

Gate-Source Voltage

Total Power Dissipation @ T

Junction to Case

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF448A/448B

450

450

15

±

30

230

0.55

-55 to 150

300

UNIT

Volts

Amps

Volts

Watts

°

C/W

°

C

RF POWER MOSFETs

N- CHANNEL ENHANCEMENT MODE

150V

140W

65MHz

The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push-

pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

Specified 150 Volt, 40.68 MHz Characteristics:

¥

Output Power = 140 Watts.

¥

Gain = 15dB (Class C)

¥

Efficiency = 75%

Low Cost Common Source RF Package.

Very High Breakdown for Improved Ruggedness.

Low Thermal Resistance.

Nitride Passivated Die for Improved Reliability.

TO-247

ARF448A

ARF448B

G

D

S

Common

Source

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com