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APTM100H45SCTG www.microsemi.com 5 – 7 Typical MOSFET Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5V 5.5V 6V 6.5V 7V 0 10 20 30 40 50 60 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) VGS=15&8V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 0 10 20 30 40 50 60 70 80 01 234 567 89 10 VGS, Gate to Source Voltage (V) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1 1.1 1.2 1.3 1.4 0 10203040 50 ID, Drain Current (A) Normalized to VGS=10V @ 9A 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 TC, Case Temperature (°C) DC Drain Current vs Case Temperature |
