APTM100A13SCG

www.microsemi.com

1 – 7

OUT

S1

G2

S2

G1

Q2

0/VBUS

VBUS

Q1

OUT

VBUS

S1

G1

0/VBUS

G2

S2

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

1000

V

65

Continuous Drain Current

49

Pulsed Drain current

240

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

156

m

Ω

Maximum Power Dissipation

1250

W

Avalanche current (repetitive and non repetitive)

24

A

Repetitive Avalanche Energy

30

Single Pulse Avalanche Energy

1300

mJ

Application

•

Motor control

•

Switched Mode Power Supplies

•

Uninterruptible Power Supplies

Features

•

-

-

Low input and Miller capacitance

-

Low gate charge

-

Avalanche energy rated

-

Very rugged

•

Parallel SiC Schottky Diode

-

Zero reverse recovery

-

Zero forward recovery

-

Temperature Independent switching behavior

-

Positive temperature coefficient on VF

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

-

M5 power connectors

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Low profile

•

RoHS Compliant

Phase leg

Series & SiC parallel diodes

MOSFET Power Module