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APTM20DHM08G Datasheet(PDF) 6 Page - Microsemi Corporation

Part # APTM20DHM08G
Description  Asymmetrical - bridge MOSFET Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM20DHM08G Datasheet(HTML) 6 Page - Microsemi Corporation

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APTM20DHM08G
www.microsemi.com
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
0
50
100 150 200 250 300 350
ID, Drain Current (A)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0
50
100 150 200 250 300 350
ID, Drain Current (A)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
Eoff
0
1
2
3
4
0
50
100 150 200 250 300 350
ID, Drain Current (A)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
Eon
Eoff
1
2
3
4
5
6
0
5
10
15
20
25
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=133V
ID=208A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
25
50
75
100 125 150 175 200
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.


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