APTM20AM10STG datasheet(4/6 Pages) MICROSEMI

Part #	APTM20AM10STG

Description	Phase leg Series & parallel diodes MOSFET Power Module

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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APTM20AM10STG

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Typical Performance Curve

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

5.5V

6V

6.5V

7V

7.5V

9V

0

100

200

300

400

500

0

5

10

15

20

25

VDS, Drain to Source Voltage (V)

VGS=15&10V

Low Voltage Output Characteristics

Transfert Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

0

100

200

300

400

2

345

6789

VGS, Gate to Source Voltage (V)

VDS > ID(on)xRDS(on)MAX

250µs pulse test @ < 0.5 duty cycle

RDS(on) vs Drain Current

VGS=10V

VGS=20V

0.9

0.95

1

1.05

1.1

1.15

1.2

0

40

80

120

160

200

240

ID, Drain Current (A)

Normalized to

VGS=10V @ 87.5A

0

20

40

60

80

100

120

140

160

180

25

50

75

100

125

150

TC, Case Temperature (°C)

DC Drain Current vs Case Temperature

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APTM20AM10STG Datasheet(PDF) 4 Page - Microsemi Corporation

APTM20AM10STG Datasheet(HTML) 4 Page - Microsemi Corporation

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