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APTGT225DU170G Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTGT225DU170G Datasheet(HTML) 5 Page - Microsemi Corporation |
5 / 5 page APTGT225DU170G www.microsemi.com 5 - 5 Forward Characteristic of diode TJ=25°C TJ=125°C TJ=125°C 0 50 100 150 200 250 300 350 400 450 00.5 1 1.522.5 3 V F (V) hard switching ZCS ZVS 0 5 10 15 20 0 60 120 180 240 300 360 I C (A) VCE=900V D=50% RG=3.3Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.04 0.08 0.12 0.16 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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