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APTGT200DU60TG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTGT200DU60TG Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 6 page APTGT200DU60TG www.microsemi.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 250 µA Tj = 25°C 1.5 1.9 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 200A Tj = 150°C 1.7 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 2 mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 12.3 Coes Output Capacitance 0.8 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.4 nF Td(on) Turn-on Delay Time 115 Tr Rise Time 45 Td(off) Turn-off Delay Time 225 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A RG = 2Ω 55 ns Td(on) Turn-on Delay Time 130 Tr Rise Time 50 Td(off) Turn-off Delay Time 300 Tf Fall Time Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 200A RG = 2Ω 70 ns Tj = 25°C 1 Eon Turn on Energy Tj = 150°C 1.8 mJ Tj = 25°C 5.7 Eoff Turn off Energy VGE = ±15V VBus = 300V IC = 200A RG = 2Ω Tj = 150°C 7 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR=600V Tj = 150°C 500 µA IF DC Forward Current Tc = 80°C 200 A Tj = 25°C 1.6 2 VF Diode Forward Voltage IF = 200A VGE = 0V Tj = 150°C 1.5 V Tj = 25°C 130 trr Reverse Recovery Time Tj = 150°C 225 ns Tj = 25°C 9 Qrr Reverse Recovery Charge Tj = 150°C 19 µC Tj = 25°C 2.3 Er Reverse Recovery Energy IF = 200A VR = 300V di/dt =2200A/µs Tj = 150°C 4.7 mJ |
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